Qspeed H-Series Diodes

Description

Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.

Product Highlights

Features

  • Low QRR, Low IRRM, Low tRR
  • High dIF/dt capable (1000A/µs)
  • Soft recovery

Benefits

  • Increases efficiency
    • Eliminates need for snubber circuits
    • Reduces EMI filter component size & count
  • Enables extremely fast switching

Applications

  • Power Factor Correction (PFC) Boost Diode
  • Motor drive circuits
  • DC-AC Inverters

Related Information

Simulate Qspeed diodes on PowerEsim

Power Integrations has partnered with PowerEsim to bring you a fast and accurate way to simulate the superior performance of Qspeed products. Follow the link by clicking on the PowerEsim logo below.

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Component Selection Table

Datasheet
VRRM
MAX
IF<AVG>
TJ
=150°1
VF<TYP>
TJ
=150°
QRR
TJ
=25°
QRR
TJ
=125°
QH03TZ6002 600 V 3 A 2.1 V 5.8 nC 14.8 nC
QH05TZ600 600 V 5 A 2.2 V 6.5 nC 18.9 nC
QH08TZ600 600 V 8 A 2.2 V 8.0 nC 25.5 nC
QH12TZ600 600 V 12 A 2.3 V 9.2 nC 30 nC
NOTES:
1. Temperatures are in degrees celsius (°C).
2. All parts in the 600 V H-Series use the TO-220AC package type.

To purchase samples, visit our samples store. For quantity pricing, please contact your nearest sales representative or distributor.

Application and Design Notes

Appnote
Description
AN 300High Temperature Reverse Bias (HTRB) Reliability Testing
AN 301Reverse Recovery Charge, Current and Time
AN 302Reverse Voltage Sharing of Series Rectifiers
AN 303RoHS Compliant Soldering Considerations