ChargerLab 2025 World GaN Conference
China
Hosted by ChargerLAB, the 2025 World GaN Conference will be held virtually on July 31. This seminar will feature exciting presentations from several renowned semiconductor companies and will explore the latest trends in the GaN (Gallium Nitride) field with the audience.
Presentation by PI Technical Expert:
PowiGaN™: Cutting-Edge GaN Technology
- 15:00 - 15:20
In the design of multi-output offline power conversion, the offline flyback converter is widely recognized as a highly cost-effective solution. However, in applications with both high input and high output voltages, the voltage stress on the primary switch has always been a limiting factor. These applications include welding equipment, auxiliary power supplies for industrial equipment, lighting, and electric vehicle charging. In such cases, the output voltage often exceeds 50V, and during switch-off, this voltage is reflected to the primary side of the power converter.
The transformer turns ratio can increase the voltage applied to the primary side (known as the "output reflected voltage," or VOR), which adds to the DC bus voltage. The DC bus voltage is determined by the input voltage and the voltage spike caused by the energy stored in the leakage inductance of the primary winding during switch-off (referred to as VLE). These three factors together increase the voltage stress on the primary switch.
Power Integrations has introduced the InnoSwitch3-EP and InnoMux2 series ICs, which integrate highly cost-effective 900V, 1250V, and 1700V switches using PowiGaN™ technology. These devices greatly simplify the design of single- and multi-output power supplies in high-voltage environments.
In this lecture, we will introduce this new technology, demonstrate its application in real-world power conversion circuits, and highlight new applications that can benefit from it. Switching losses are a critical concern, especially when the VDS voltage exceeds 230VAC, as second-order voltage effects become significantly pronounced. Additionally, we will delve into various soft-switching techniques to understand how to manage the impact of extremely high drain-source voltages on the power switch’s output capacitance (COSS), even though this impact has been mitigated by advancements in wide bandgap semiconductor switch characteristics.
