Anwenderforum Leistungshalbleiter
2023 November 22 - 23
Novotel Messe München -
München,
德国
As the voltage of GaN increases is likely to continue to replace silicon carbide, and as its current carrying capacity increases, GaN may even challenge IGBTs in high power systems. When will this happen? We can expect 1200V GaN very soon, and who knows where it could go from there.
