SID11x2K
具有先进的安全和保护功能的电气绝缘的单通道门极驱动器IC
应用
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产品
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数据手册
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RDK
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门极峰值电流（最大）
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IGBT电压等级
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最大开关频率
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支持的模块
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逻辑输入电压
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保护功能
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技术
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接口类型
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支持的拓扑
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电源电压 (典型)
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隔离类型
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隔离技术
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時間 - 輸出下降
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時間 - 輸出上升
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驱动模式
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主/外围
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并行支持？
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Data Sheet
查看PDF
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RDK
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Gate Peak Current (Max)
+1 A
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IGBT Voltage Class
1200 V
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Max Switching Frequency
250.0 kHz
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Supported Module Type
IGBT, N-Channel MOSFET
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Logic Input Voltage
5
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Protection Features
Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
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Technology
SCALE-iDriver
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Interface Type
Electrical
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Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
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Supply Voltage (Typ)
5 V
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Isolation Type
Reinforced
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Isolation Technology
Fluxlink
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Time - Output Fall
18 ns
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Time - Output Rise
22 ns
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Driving Mode
Direct-Independent
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Main/Peripheral
N/A
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Paralleling Support?
No
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|
|
Data Sheet
查看PDF
|
RDK
|
Gate Peak Current (Max)
+2 A
|
IGBT Voltage Class
1200 V
|
Max Switching Frequency
250.0 kHz
|
Supported Module Type
IGBT, N-Channel MOSFET
|
Logic Input Voltage
5
|
Protection Features
Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
|
Technology
SCALE-iDriver
|
Interface Type
Electrical
|
Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
|
Supply Voltage (Typ)
5 V
|
Isolation Type
Reinforced
|
Isolation Technology
Fluxlink
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Time - Output Fall
18 ns
|
Time - Output Rise
22 ns
|
Driving Mode
Direct-Independent
|
Main/Peripheral
N/A
|
Paralleling Support?
No
|
|
|
Data Sheet
查看PDF
|
RDK
|
Gate Peak Current (Max)
+5 A
|
IGBT Voltage Class
1200 V
|
Max Switching Frequency
250.0 kHz
|
Supported Module Type
IGBT, N-Channel MOSFET
|
Logic Input Voltage
5
|
Protection Features
Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
|
Technology
SCALE-iDriver
|
Interface Type
Electrical
|
Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
|
Supply Voltage (Typ)
5 V
|
Isolation Type
Reinforced
|
Isolation Technology
Fluxlink
|
Time - Output Fall
18 ns
|
Time - Output Rise
22 ns
|
Driving Mode
Direct-Independent
|
Main/Peripheral
N/A
|
Paralleling Support?
No
|
|
|
Data Sheet
查看PDF
|
RDK
|
Gate Peak Current (Max)
+8 A
|
IGBT Voltage Class
1200 V
|
Max Switching Frequency
250.0 kHz
|
Supported Module Type
IGBT, N-Channel MOSFET
|
Logic Input Voltage
5
|
Protection Features
Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
|
Technology
SCALE-iDriver
|
Interface Type
Electrical
|
Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
|
Supply Voltage (Typ)
5 V
|
Isolation Type
Reinforced
|
Isolation Technology
Fluxlink
|
Time - Output Fall
18 ns
|
Time - Output Rise
22 ns
|
Driving Mode
Direct-Independent
|
Main/Peripheral
N/A
|
Paralleling Support?
No
|
产品详情
SID11x2K是采用标准eSOP封装的单通道IGBT和MOSFET驱动器。该器件利用Power Integrations创新的固体绝缘FluxLink技术实现了加强电气绝缘。其峰值输出驱动电流可达8 A，可直接驱动600 A（典型值���的开关器件，而无需任何额外的有源元件。对于更大电流的半导体器件，其所要求的门极电流会超出SID11x2K的最大输出电流，可以在外部添加一个放大器（推动级）。稳定的门极正负电压由一个单极隔离电压源提供。
该器件还具有带高级软关断(ASSD)的短路保护(DESAT)、用于原方/副方的欠压保护(UVLO)以及带温度和过程补偿输出阻抗的轨到轨输出等更多功能，可确保产品即使在严苛的条件下也能安全工作。
控制器（PWM和故障）信号兼容5 V CMOS��辑电平，使用外部电阻分压可将逻辑电平调整到15 V。
- 高度集成，封装紧凑
- 独立的门极开通和关断管脚，可提供8 A峰值驱动电流
- 集成的FluxLink™技术为原方与副方提供可靠绝缘
- 稳定的轨到轨输出电压
- 副方供电为单极电源电压
- 适合600 V/650 V/1200 V IGBT和MOSFET功率开关
- 开关频率最高250 kHz
- 传输延迟时间非常短，仅为260 ns
- 传输延迟抖动±5 ns
- 工作环境温度介于-40°C至125°C之间
- 具有较高的共模瞬态抗扰性
- 采用9.5 mm电气间隙和爬电距离的eSOP封装
- 先进的保护/安全功能
- 原方和副方欠压保护(UVLO)与故障反馈
- 采用VCESAT监控和故障反馈二极管*或电阻串**的短路保护（参见图1）
- 高级软关断(ASSD)
- 完全符合各项安规要求
- 产品100%进行局部放电测试
- 产品100%进行6 kV RMS 1秒的HIPOT合规性测试
- 符合VDE 0884-10的加强绝缘标准
- UL认证：E358471
- 相比漏电起痕指数(CTI) = 600
- 环保封装
- 无卤素且符合RoHS标准
